This paper reports that an exact quantum close coupling calculation is carried out for rotational excitation in Ne-HF collisions on the available anisotropic po
This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) by applying p
This paper solves the three-dimensional Navier-Stokes equation by a fractional-step method with the Reynolds number Reγ=194 and the rotation number Nγ=0-0.12.
Taking into consideration the changes of the geometric shielding effect in a molecule as the energy of incident electrons varies, this paper presents an empiric
We have studied the far-infrared spectra of two-electron vertically coupled quantum dots in an axial magnetic field by exact diagonalization. The calculated res
Using diborane as doping gas, p-dopedμc-Si:H layers are deposited by using the plasma enhanced chemical vapour deposition (PECVD) technology. The effects of de
A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region Ⅰ - Ⅴ model. The static current cha