用磁控溅射淀积不同富Si程度的掺Er富Si氧化硅薄膜 .室温下测量其光致发光谱 ,观察到各谱中都含有 1.5 4和 1.38μm两个发光峰 ,其中 1.5 4和 1.38μm的光致发光峰分别来自Er3+ 和氧化硅中某种缺陷 .系统研究了Er3+ 1.5 4μm光致发光峰强度对富Si程度及退火温度的依赖关系 .还发现 1.5 4μm发光峰强度与 1.38μm发光峰强度相互关联 ,对此进行了讨论 Different Si-rich Si-rich silicon oxide films were deposited by magnetron sputtering.The photoluminescence (PL) spectra were measured at room temperature.It was observed that there were two luminescence peaks of 1.5 4 and 1.38 μm in each spectrum, of which 1.5 4 and 1.38μm photoluminescence peaks were from Er3 + and silicon oxide in some defects.The system was studied Er3 + 1.5 4μm photoluminescence peak intensity of Si-rich degree and annealing temperature dependence.It was also found 1.5 4μm luminescence intensity and 1.38μm The luminescence peak intensities are correlated and discussed