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为了满足尺寸不断缩小的金属氧化物场效应晶体管(MOSFET)技术的需求,需要在低温条件下实现肖特基势垒高度的调节,利用杂质分凝技术,结合微波退火进行Ni Si/Si接触的肖特基势垒高度的调节,并采用先离子注入、后淀积金属形成金属硅化物(IBS)和先淀积金属形成金属硅化物后进行离子注入并退火(IAS)两种方案进行研究。通过C-V和I-V测试对制备的样品进行了电学表征,并通过计算给出了其肖特基势垒高度,结果表明微波退火可实现空穴和电子肖特基势垒的有效调节,而且IBS方案的调节效果优于IAS方案的调节效果。除此之外,相对于传统热退火技术,微波退火可以在更低的温度下实现相同肖特基势垒的调节。
In order to meet the demand of shrinking metal oxide field-effect transistor (MOSFET) technology, it is necessary to adjust the Schottky barrier height under the condition of low temperature. By using impurity segregation technology and NiSi / Si contact by microwave annealing Schottky barrier height adjustment and ion implantation and annealing (IAS) were studied by ion implantation, post deposition of metal to form metal silicide (IBS), and deposition of metal to form metal silicide. The prepared samples were characterized by CV and IV, and their Schottky barrier height was calculated. The results show that microwave annealing can effectively regulate the hole and electron Schottky barrier, and the IBS scheme The adjustment effect is superior to the adjustment effect of IAS program. In addition, microwave annealing can achieve the same Schottky barrier adjustment at lower temperatures than traditional thermal annealing techniques.