【摘 要】
：
选取了TGS晶体的 (0 0 1) ,(110 ) ,(0 10 )和 (10 0 )四个面为研究对象 ,分析讨论了TGS晶体的表面扩散螺位错生长机制 ,发现生长基元的脱水化进入表面层过程与表面扩散过程
【机 构】
：
山东大学晶体材料国家重点实验室!济南250100,山东大学晶体材料国家重点实验室!济南250100,山东大学晶体材料国家重点实验室!济南250100,山东大学晶体材料国家重点实验室!济南250100
论文部分内容阅读
选取了TGS晶体的 (0 0 1) ,(110 ) ,(0 10 )和 (10 0 )四个面为研究对象 ,分析讨论了TGS晶体的表面扩散螺位错生长机制 ,发现生长基元的脱水化进入表面层过程与表面扩散过程相比 ,前者在TGS晶体的生长过程中起着更重要的作用 ;同时 ,在较高的相对过饱和度下 ,观察到了TGS自然结晶体的两种简单晶形 .
The four surfaces of (0 0 1), (110), (0 10) and (10 0) of TGS crystal were selected as the research object. The growth mechanism of dislocation of TGS crystal surface was analyzed and discussed. Dehydration into the surface layer compared with the surface diffusion process, the former plays a more important role in the growth of TGS crystals; at the same time, at higher relative saturation, two simple crystalline forms of TGS crystals were observed .
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