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We have investigated the effects of high magnetic fields on the microstructures and magnetic properties of Fe-Si-O films deposited by RF sputtering. Three typical sample appearances, hole-in-center, phase-separation and hybridization were obtained for the Fe-Si-O films prepared in the oxygen-argon flow ratio VO2/Vtotal<1.0%, magnetic field Bappl≤1.0 T regime, indicating that not only the distribution of plasma but also the angular distribution of sputtered atoms are influenced by a high magnetic fleld. In the oxygen-argon flow ratio VO3/Vtotal>2.0%, magnetic field Bappl≥2.0 T regime, strong (110) orientation of Fe3O4 grains and larger remanence and coercivity measured in the direction normal to the film plane appeared in the Fe-Si-O films. This result indicates that the high magnetic fields not only orient the Fe-Si-O film but also induce remarkable perpendicular magnetic anisotropy during the deposition.
We have investigated the effects of high magnetic fields on the microstructures and magnetic properties of Fe-Si-O films deposited by RF sputtering. Three typical sample appearances, hole-in-center, phase-separation and hybridization were obtained for the Fe-Si -O films prepared in the oxygen-argon flow ratio VO2 / Vtotal <1.0%, magnetic field Bappl≤1.0 T regime, indicating that not only the distribution of plasma but also the angular distribution of sputtered atoms are influenced by a high magnetic fleld. In the oxygen-argon flow ratio VO3 / Vtotal> 2.0%, magnetic field Bapp1≥2.0 T regime, strong (110) orientation of Fe3O4 grains and larger remanence and coercivity measured in the direction normal to the film plane appeared in the Fe-Si -O films. This result indicates that the high magnetic fields not only orient the Fe-Si-O film but also induce remarkable perpendicular magnetic anisotropy during the deposition.