论文部分内容阅读
金刚石膜压力传感器是在本征金刚石膜片上沉积4个掺杂金刚石膜压敏电阻,4个压敏电阻所在部位的膜厚度是压敏电阻和本征金刚石膜片厚度相加,它不同于利用扩散掺杂工艺形成的硅压力传感器,后者的4个掺杂压敏电阻和本征硅组成一个均匀的平面。我们发现,压敏电阻的形状对承载膜应力、应变分布及承压强度至关重要,提出了电阻条圆角设计方案,从而优化了电阻条形状及长、宽、厚尺寸设计,获得了具有高承压强度、输出稳定性好的金刚石膜压力传感器。
Diamond membrane pressure sensor is deposited on the intrinsic diamond film 4 doped diamond film varistor, 4 Varistor where the film thickness is the thickness of the varistor and intrinsic diamond film added, which is different from The silicon pressure sensor formed by the diffusion doping process, the latter four doping varistors and intrinsic silicon to form a uniform plane. We found that the shape of the varistor is crucial to the stress and strain distribution and the compressive strength of the carrier film. The design of the fillet of the resistive strip is put forward to optimize the shape of the resistive strip and the design of the length, width and thickness. High compressive strength, the output stability of the diamond membrane pressure sensor.