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北海道大学佐藤教男教授解释说“佐佐木从测定钽阳极氧化膜的光电效应和电极电容,提出了n-i-p接合型模型,即与金属相接的20～50?厚的内层是金属离子过剩的n型氧化物(供给体是过剩金属离子),中间层是成长为厚的化学量组成的真性半导体氧化物,外层是20～50?厚的p型氧化物(接受体是过剩的氧离子或表面吸附氧).实验中发现在氧化膜生长中,氧膜阻挡层内的A1~(3+)过剩,或氧离子不足的事实,外层之p型氧化物层是由于从溶液中浸入的质子而生成的”.阳极氧化膜作为金属/氧化膜/溶液体系的电极,或金属/氧化膜/金属体系的二极管,都显示出整
Hokkaido University Professor Sato taught the explanation “Sasaki from tantalum anodized film measuring the photoelectric effect and electrode capacitance, proposed nip junction type model, that is, with the metal phase of the 20 ~ 50? Thick inner layer of metal ions is excess The n-type oxide (the donor is an excess metal ion), the intermediate layer is a true semiconducting oxide grown to a thick chemical composition and the outer layer is a p-type oxide with a thickness of 20-50 Å (the acceptor is an excess of oxygen ions Or adsorbed oxygen on the surface.) In the experiment, it was found that in the oxide film growth, there is an excess of Al 3+ in the barrier layer of the oxygen film or the fact that oxygen ions are insufficient. The p-type oxide layer of the outer layer is due to the fact that Proton generated ”anodic oxide film as a metal / oxide film / solution system electrode, or metal / oxide film / metal system of the diode, all showed that the whole