论文部分内容阅读
在IC,LSI高速器件的领域里曾经是双极型LSI独占的场所,到1970年代后半期,随着微细加工技术的发展,具有高集成度特点的MOSLSI在这个高速领域里也抬头了。然而,微细化技术的进步,双极型LSI也正在稳健地提高。即用电子束曝光和缩小投影曝光方式,即使对于包含外延工序的大直径硅片也能保持高的精度,连同干法刻蚀技术,双极型LSI的性能正在迅速地发展。
In the field of IC and LSI high-speed devices, it was once the exclusive place of bipolar LSI. By the second half of the 1970s, with the development of micro-fabrication technology, the MOSLSI with high integration also gained ground in this high-speed area. However, advances in miniaturization technology and bipolar LSIs are also steadily improving. That is, the electron beam exposure and the reduced projection exposure method can maintain high precision even for the large-diameter wafer including the epitaxial process, and the performance of the bipolar LSI is rapidly developing along with the dry etching technique.