文摘某些分子束外延生长的(Al,Ga)As双异质结激光器,在室温左右观察到激射阈值电流对温度(即使是负温发)的依赖性减少。这种现象可以通过P-n结与有源层异质结的隔离、而不能用分流或材料的非均匀性引起的增益变化来解释。也不能用通常解释引起非平面和多量子阱激光器阈值电流变化的态密度变化或电流拥塞来解释。为了实现激射,远结(离有源联相对较远的P-n结—译者注)需要进入有源层的少数载流子扩散,同时允许多数载流子流出有源层。多数载流子形成的电流无助于激射,反而增加了获得 Abstract Some (Al, Ga) As double heterojunction laser grown by molecular beam epitaxy has observed the dependence of the lasing threshold current on the temperature, even at negative temperature, at room temperature. This phenomenon can be explained by the isolation of the P-n junction from the active layer heteroj unction and not by the change in gain due to shunting or material inhomogeneity. Nor can it be explained by a change in state density or current congestion that generally accounts for the change in threshold current that causes non-planar and multiple quantum well lasers. In order to achieve lasing, far junctions (P-n junctions relatively far away from the active junction) require minority carrier diffusion into the active layer while allowing majority carriers to flow out of the active layer. The majority of the current carriers do not help lasing, but increased access