论文部分内容阅读
针对功率VDMOS真空下壳温显著升高的问题,对安装叉指形散热器的功率VDMOS进行了三维建模和温度场模拟分析,研究了其在大气与真空环境下的散热模型。真空环境下功率为10 W、散热片面积为278.42 cm2时,VDMOS壳温较大气下升高了89.8℃。找出了VDMOS大气及真空下壳温与工作功率及散热器表面积之间存在的关系,并进行了相应实验,利用公式计算出的器件壳温与实验壳温的最大差值,大气下不超过2℃、真空下不超过3℃,皆未超过5%,该公式可以作为功率VDMOS应用及热设计的参考依据。分析了真空环境下,功率VDMOS壳温显著升高的原因,并提出了改善措施。
In view of the significant increase of the shell temperature under the VDMOS vacuum, the three-dimensional modeling and temperature field simulation of the power VDMOS with the interdigital heatsink were carried out. The heat dissipation model under atmospheric and vacuum conditions was studied. When the power is 10 W in the vacuum environment and the fin area is 278.42 cm2, the VDMOS shell temperature is 89.8 ℃ higher than the atmospheric temperature. The relationship between the shell temperature and the working power and the surface area of the radiator is found out under VDMOS atmosphere and vacuum, and the corresponding experiment is carried out. The maximum difference between the shell temperature and the shell temperature calculated by the formula is not exceeded in the atmosphere 2 ℃, under vacuum not more than 3 ℃, all not more than 5%, the formula can be used as power VDMOS applications and thermal design reference. The reason why the VDMOS shell temperature rises significantly under vacuum environment is analyzed and the improvement measures are put forward.