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石墨烯以其独特的二维结构和高的热导电性、高杨氏模量、高电子/空穴迁移率、高抗拉强度、大的布鲁诺尔-埃米特-特勒表面积和量子霍尔效应等优异性能,备受科研工作者的关注,迅速成为材料、化学、物理和工程领域的热点研究课题。与富勒烯(C_(60)、C_(70))的功能化一样,利用共价键合修饰或非共价键合修饰的方法可以在石墨烯表面或石墨烯体系中引入功能基团或功能组分,制备出种类繁多的具有特殊光、电、磁和生物效应的石墨烯衍生物。以石墨烯作为数据存储介质的分子级别计算已经引发了一场信息技术产业的革命,它能在更小的空间上,使用更少的能源来存储更多的数据信息,有望成为目前基于硅半导体存储技术的潜在替代或补充技术。基于石墨烯的存储器件展现出优良的数据存储性能、器件稳定性和可靠性,为使这类器件具有更好的实际应用前景,人们采用许多技术手段来调控和优化器件性能。本文综述了近年来引起广泛关注的诸如石墨烯、共价修饰的石墨烯、石墨烯基复合材料、石墨烯/无机材料异质结等基于石墨烯及其衍生物的存储器件及相关材料研究进展,以及石墨烯/还原的氧化石墨烯透明电极在存储器件中的应用。探讨了该领域存在的亟待解决的关键基础问题和未来发展方向。
With its unique two-dimensional structure and high thermal conductivity, high Young’s modulus, high electron / hole mobility, high tensile strength, large Brunauer-Emmett-Teller surface area and quantum well Er effect and other excellent performance, has attracted the attention of researchers, quickly become a hot research topic in the field of materials, chemistry, physics and engineering. As with the functionalization of fullerenes (C 60, C 70), methods utilizing covalently or non-covalently bonded modifications can introduce functional groups on the graphene surface or in the graphene system or Functional components, to prepare a wide variety of graphene derivatives with special optical, electrical, magnetic and biological effects. Molecular-level calculations using graphene as a data storage medium have sparked a revolution in the information technology industry that uses less energy to store more data and information in a smaller space and is expected to become the current silicon-based semiconductor Potential alternative or complementary technologies to storage technologies. Graphene-based memory devices show excellent data storage performance, device stability and reliability. To make these devices have better practical application prospect, many techniques are adopted to regulate and optimize the device performance. This review summarizes the research progress of memory devices and related materials based on graphene and its derivatives, such as graphene, covalently modified graphene, graphene based composites, and graphene / inorganic material heterojunctions that have drawn much attention in recent years , And the use of graphene / reduced graphene oxide transparent electrodes in memory devices. The key basic problems that need to be solved in this area and the future development are discussed.