论文部分内容阅读
报道了一种适用于X波段的低损耗高隔离度开关的GaAs PIN二极管.讨论了GaAs PIN二极管的物理特性和主要电学参数对开关性能的影响,并且介绍了工艺制备过程.测试结果表明在100MHz~12.1GHz范围内,正向电流为10 mA时的开关电阻小于2.2Ω,而反向电压为-10 V时开关电容小于20fF.
A kind of GaAs PIN diode with low loss and high isolation switch for X-band is reported. The physical properties of GaAs PIN diode and the influence of the main electrical parameters on the switching performance are discussed, and the process of fabrication is introduced. The test results show that at 100MHz The switching resistance is less than 2.2Ω at ~ 10 mA forward-to-12.1GHz and less than 20fF at -10 V reverse voltage.