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采用射频磁控溅射技术,在石英玻璃衬底上沉积了具有不同层数和厚度的(Si/Ge)n多层薄膜。XRD、Raman光谱测试表明,溅射态薄膜为微晶结构,在溅射过程中层间扩散形成Si-Ge振动键,溅射时间和薄膜层数影响着薄膜层间的扩散和结晶率;FESEM结果表明,薄膜表面由颗粒团簇构成,层与层之间有明显界面。UV-vis光谱测试表明,(Si/Ge)n多层薄膜在可见光范围内具有较宽的吸收,增加薄膜层数可扩大太阳能光谱的响应范围,而增加Si单层膜厚度对光吸收范围的影响较小。
Using RF magnetron sputtering technology, (Si / Ge) n multilayers with different layer number and thickness were deposited on quartz glass substrate. The results of XRD and Raman spectroscopy show that the as-sputtered film is a microcrystalline structure, and the Si-Ge vibrational bonds are diffused during the sputtering process. The sputtering time and film thickness affect the diffusion and crystallization rate of the film. FESEM The results show that the film surface is composed of particle clusters with obvious interface between layers. UV-vis spectroscopy showed that the (Si / Ge) n multilayered film has a wide absorption in the visible range. Increasing the number of layers can enlarge the response range of the solar spectrum, and increasing the influence of Si monolayer thickness on the light absorption range Less affected.