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本文研究了一种倒掺杂沟道MOSFET。与传统的MOSFETs不同,这种器件采用沟道表面掺杂浓度低、体内掺杂浓度高的倒掺杂设计。基于Possion方程,建立了线性变掺杂的沟道倒掺杂模型,得出了器件表面电势以及漏极电流的表达式,研究了垂直于沟道方向上倒掺杂的陡峭程度对漏极电流、饱和驱动电流以及表面电势的影响。计算结果与二维仿真软件MEDICI模拟结果相符。
This article studies an inverted-doped channel MOSFET. Unlike conventional MOSFETs, this device uses an inverted doping design with a low doping concentration on the channel surface and a high doping concentration in the body. Based on the Possion equation, a linear doping channel doping model was established. The expressions of the surface potential and the drain current of the device were obtained. The effects of the doping level on the drain current , Saturation drive current and surface potential. The calculation results are in good agreement with the MEDICI simulation results of 2D simulation software.