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1、磁场的测量方法现在一般采用的磁场测量方法,是霍尔元件法。在图1所示的矩形半导体片中,如果在长度方向上通过电流,在垂直板的方向上加以磁场,电子的轨道就发生弯曲,在板的宽度方向上就产生电压。这电压V_H与半导体片的厚度d成反比,分别与流过的电流I、所加的磁场H成正比,这可用公式(1)来表示:
1, the magnetic field measurement method Magnetic field measurement method commonly used now, is the Hall element method. In the rectangular semiconductor wafer shown in FIG. 1, when a current is applied in the longitudinal direction and a magnetic field is applied in the direction of the vertical plate, the trajectory of the electron is bent and a voltage is generated across the width of the plate. This voltage V_H is inversely proportional to the thickness d of the semiconductor wafer and is proportional to the current I flowing and the applied magnetic field H, respectively, which can be expressed by equation (1)