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The principle of the two carriers contributing to carry the pixel signal charges is firstly presented,and then the bipolar junction photogate transistor(BJPT)with high performance is proposed for the CMOS image sensor.The numerical analytical model of the photo-charge transfer for the bipolar junction photogate is established in detail. Some numerical simulations are obtained under 0.6 μm CMOS process,which show that its readout rate increases exponentially with the increase of the photo-charge at applied voltage.
The principle of the two carriers contributing to carry the pixel signal charges is first presented, and the bipolar junction photogate transistor (BJPT) with high performance is proposed for the CMOS image sensor. Numerical analytical model of the photo-charge transfer for the bipolar junction photogate is established in detail. Some numerical simulations are obtained under 0.6 μm CMOS process, which show that its readout rate increases exponentially with the increase of the photo-charge at applied voltage.