报道了离子辐照损伤对多孔硅的形成及其发光性质的影响,硅自注入后电化学腐蚀形成多孔硅。注入剂量增加,光荧光谱强度减弱,谱峰红移,半高宽减小,如果样品被非晶化将不发光,因此,为离子注入控制多孔硅发光图形的形成提供了物理依据,制成的图形分辨率达2μm。 The effects of ionizing radiation damage on the formation of porous silicon and its luminescent properties were reported. Silicon was electrochemically etched to form porous silicon after implantation. If the sample is amorphous, it will not emit light. Therefore, it provides a physical basis for the formation of porous silicon controlled by ion implantation, The graphics resolution of 2μm.