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本文分析了非均匀掺杂衬底MOS电容对线性扫描电压的瞬态响应,提出了饱和电容法测量非均匀掺杂MOS电容少子产生寿命空间分布的方法.该方法的优点是测量与计算简单.
In this paper, we analyze the transient response of the MOS capacitor with non-uniform doping to the linear sweep voltage and propose a method to measure the lifetime distribution of the non-uniformly doped MOS capacitor by using the saturation capacitance method. The advantage of this method is its simple measurement and calculation.