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具有薄n基区和低掺杂场截止层新结构的非穿通绝缘栅双极型晶体管NPTIGBT明显降低了总损耗。特别是场截止概念与挖槽晶体管单元的结合能产生通态电压最小、开关损耗最低、载流子浓度近乎理想的器件。这种概念在600V～6.5kV以上的IGBT和二极管中得到了发展。当折衷性能和总耐量与电压和电流额定值无关时,低压器件的开关特性与高压晶体管(VBr>2kV)的处理方法不同。采用HE-EMCON二极管和高达1700V的新型场截止NPTIGBT,几乎不受开关性能的限制,不过,需考虑的是外部栅极电阻必须取确定值。相比低压晶体管,高压器件的电流密度较低,因而高压二极管和IGBT中的“动态”电场强度更临界。
NPTIGBT, a non-punch-through, insulated gate bipolar transistor with a new n-type and nodal cut-off layer, significantly reduces total loss. In particular, the combination of the field cut-off concept and the dithered transistor cell produces a device with minimum on-state voltage, lowest switching loss, and near ideal carrier concentration. This concept has been developed in IGBTs and diodes from 600 V to 6.5 kV. Low-voltage devices have different switching characteristics than high-voltage transistors (VBr> 2kV) when trade-off performance and total tolerance are independent of voltage and current ratings. The use of HE-EMCON diodes and new field-stop NPTIGBTs up to 1700V is almost unrestricted by switching performance, however, it is important to consider that the external gate resistance must be fixed. The current density of high-voltage devices is lower compared to low-voltage transistors, so the “dynamic” electric field strength in high-voltage diodes and IGBTs is more critical.