论文部分内容阅读
电子束曝光时,由于抗蚀剂层和衬底中电子散射的作用,使抗蚀剂产生不希望的曝光,这种现象就是邻近效应。它导致图形特征尺寸与设计值的差异。这是采用电子束曝光方法制作高分辨率集成电路器件的主要限制。我们采用计算机模拟法研究了邻近效应,并且探索了能改进图形保真度的工艺处理方法。有两种方法能使邻近效应大大减小,即小束径法和多层抗蚀剂技术。这两种方法已经在HP电子束曝光系统上实际试验过。
E-beam exposure, the resist layer and the substrate due to the role of electron scattering, the resist gives unwanted exposure, this phenomenon is the proximity effect. It results in a difference in the size of the graphic feature from the design value. This is a major limitation of using electron beam lithography to fabricate high resolution integrated circuit devices. We used computer simulation to study the proximity effects and explored the process approach to improve the fidelity of the pattern. There are two ways to greatly reduce the proximity effect, namely the beamlet method and multilayer resist technology. Both of these methods have been actually tested on HP electron beam exposure systems.