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为研究在低温衬底上沉积磷掺杂ZnO薄膜的性质,从室温到350°C的范围内磷掺杂的ZnO被磁控溅射到蓝宝石衬底上。样品的XRD谱显示薄膜为<001>方向择优生长,ZnO(002)面的衍射峰在250°C时最低。原子力图像分析显示:薄膜的表面形貌随沉积温度而变化,粗糙度随温度升高而增加。样品的XPS谱在134eV附近清晰地观测到了磷的P2p峰,且组分随衬底温度而变化。在400～600nm的范围内样品的平均光学透射率大于60%,所计算的光学带隙大约为3.2 eV。薄膜的Hall测量表明薄膜为n型电导,且薄膜中的载流子浓度随温度的升高而降低。该工作有助于对ZnO低温磷掺杂薄膜性质的了解,从而在低温下获得磷掺杂的ZnO p型导电薄膜。
To investigate the properties of phosphorus-doped ZnO films deposited on cryogenic substrates, phosphorus-doped ZnO was magnetron sputtered onto a sapphire substrate from room temperature to 350 ° C. The XRD patterns of the samples show that the films grow preferentially in the <001> direction, and the diffraction peak of the ZnO (002) plane is the lowest at 250 ° C. Atomic force image analysis shows that the surface morphology of the films changes with the deposition temperature, and the roughness increases with the temperature. The XPS spectrum of the sample clearly observed the P2p peak of phosphorus near 134eV, and the composition varied with the substrate temperature. The average optical transmission of the sample is greater than 60% in the range of 400-600 nm and the calculated optical bandgap is approximately 3.2 eV. The Hall measurement of the film shows that the film is n-type conductivity, and the carrier concentration in the film decreases with increasing temperature. This work contributes to the understanding of the properties of ZnO low-temperature phosphorus-doped films and thus the phosphorus-doped ZnO p-type conductive films at low temperatures.