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随着MOSFET的特征尺寸进入20nm技术节点,源漏接触电阻成为源漏寄生电阻的主导部分,后栅工艺对硅化物的高温特性提出了更高的要求。分析了Ni/Ti/Si结构在不同温度退火下形成的硅化物的薄膜特性和方块电阻。分别采用J-V和C-V方法,提取硅化物与n-Si(100)接触的势垒高度。Ni/Ti/Si结构形成的镍硅化物在高温下具有良好的薄膜特性,并且可以得到低势垒的肖特基接触。随着退火温度的升高,势垒高度逐渐降低。研究了界面态的影响,在低于650℃的温度下退火,界面态密度随退火温度升高而逐渐增大,高于750℃后,界面电荷极性翻转。
With the MOSFET’s feature size entering the 20nm technology node, the source-drain contact resistance becomes the dominant part of the parasitic resistance of the source and drain. The gate-last process poses higher requirements for the high temperature characteristics of the silicide. The film properties and sheet resistance of the silicide formed on the Ni / Ti / Si structure at different temperatures were analyzed. J-V and C-V methods were used to extract the barrier height of contact between silicide and n-Si (100). The nickel silicide formed by the Ni / Ti / Si structure has good film characteristics at a high temperature, and a low barrier Schottky contact can be obtained. As the annealing temperature increases, the barrier height decreases. The effects of interface states were investigated. When the annealing temperature was lower than 650 ℃, the density of interface states increased with annealing temperature. When the temperature was above 750 ℃, the interface charge polarity reversed.