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自从 C.A.Mead 在1966年提出砷化镓肖特基势垒栅场效应晶体管(GaAs ME-SFET)以来,就普遍认为它将是应用于微波领域里的器件。GaAs FET 的早期发展是缓慢的,但在1970和1971年在制造工艺和材料制备上有重大突破后,使得所希望的器件得以实现。最高振荡频率 f_(max)达50千兆赫且直到18千兆赫仍有有用增益的1微米栅长的MESFET,在许多研究室都能制得。今天我们在微波半导体工业里看到的情况,可称之为“砷化镓场效应晶体管革命”。
Since C.A. Mead proposed the gallium arsenide Schottky barrier field effect transistor (GaAs ME-SFET) in 1966, it is generally believed that it will be a device used in the microwave field. The early development of GaAs FETs was slow, but with major breakthroughs in manufacturing processes and material preparation in 1970 and 1971, the desired devices were made. MESFETs with a gate length of 1 micron with a maximum oscillation frequency of f_ (max) up to 50 gigahertz and still useful gain up to 18 gigahertz are available in many laboratories. What we see today in the microwave semiconductor industry can be called the “GaAs FET revolution.”