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基于射线追踪法,推导了外腔半导体激光器的连续输出谱的隐函表达式.在此基础上,结合载流子速率方程,对超短外腔半导体激光器的输出谱及P-I特性进行了研究.结果表明:当外腔长度发生波长量级的变化时,超短外腔激光器的P-I特性将发生显著变化;随着外腔长度的变化,超短外腔激光器的激射波长在10nm范围内呈周期性跳变,当外腔长度介于40μm—70μm范围内,激射波长跳变范围最大.理论模拟结果与实验报道结果符合.
Based on the ray tracing method, the implicit expression of the continuous output spectrum of the external cavity semiconductor laser is derived. Based on this, the output spectrum and PI characteristics of the ultra-short external cavity semiconductor laser are studied based on the carrier rate equation. The results show that when the length of the external cavity changes, the PI characteristic of the ultrashort external laser will change significantly. With the change of the external cavity length, the lasing wavelength of the ultrashort external cavity laser is in the range of 10nm Periodic jump, when the length of the external cavity is in the range of 40μm-70μm, the range of the laser wavelength jump is maximal.The theoretical simulation results are consistent with the experimental results.