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采用电沉积法将CdS和CdSe纳米颗粒沉积在ZnO纳米线阵列上得到CdSe/CdS纳米颗粒共敏化ZnO光电极。利用X射线衍射、扫描电镜、透射电镜和能谱仪等对所得样品结构和形貌进行表征,并通过紫外-可见分光光度计和电化学工作站测试其光吸收性能和光电化学性能。结果发现,相对纳米颗粒单敏化CdS/ZnO光电极而言,纳米颗粒共敏化CdSe/CdS/ZnO光电极具有更好的可见光吸收性能,进而提高短路电流密度和光电转换效率分别到9.56mA/cm2和1.89%。
CdS and CdSe nanoparticles were deposited on ZnO nanowire arrays by electrodeposition to obtain CdSe / CdS nanoparticle-sensitized ZnO photoelectrodes. The structure and morphology of the obtained samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and energy dispersive spectroscopy. The light absorption and photoelectrochemical properties of the samples were tested by ultraviolet-visible spectrophotometer and electrochemical workstation. The results showed that nanoparticle co-sensitized CdSe / CdS / ZnO photoelectrode had better visible light absorption performance than single-sensitized CdS / ZnO photoelectrode, which increased the short-circuit current density and the photoelectric conversion efficiency to 9.56mA / cm2 and 1.89%.