据报道,美国《科学》杂志近日刊登了北京大学信息科学技术学院彭练矛和张志勇课题组在碳纳米管电子学领域取得的世界级突破:首次制备出5 nm栅长的高性能碳纳米晶体管,并证明其性能超越同等尺寸的硅基CMOS(互补金属-氧化物-半导体)场效应晶体管,将晶体管性能推至理论极限。因主流硅基CMOS技术面临尺寸缩减的限制,20多年来,科学界和产业界一直在探索各种新材料和新原理的晶 According to reports, the United States, “Science” magazine recently published Peking University School of Information Science Peng Liangyu and Zhang Zhiyong task force in the field of carbon nanotube electronics made a breakthrough in the field: the first time to prepare a 5nm gate length of high-performance carbon nanotube transistor , And demonstrated that its performance surpasses the same size silicon-based CMOS (Complementary Metal-Oxide-Semiconductor) field-effect transistor, pushing transistor performance to the theoretical limit. As mainstream silicon-based CMOS technology faces downsizing constraints, for more than two decades, the scientific community and industry have been exploring various new materials and new-principle crystals