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针对源漏诱生应变Ge沟道p-MOSFET的发展趋势,开发了一种基于离子注入与快速热退火的GeSn合金生长新技术,并进行了二次离子质谱、X射线衍射、透射电子显微镜和方块电阻等测试。结果表明,采用快速热退火,可将单晶Ge衬底中的Sn原子激发至替位式位置,形成GeSn合金。当退火温度为400℃时,Sn原子激活率为100%,其峰值浓度固定为1×1021 cm-3,与Sn的初始注入剂量无关。该技术与现有CMOS工艺兼容,附加成本低,适用于单轴压应变Ge沟道MOSFET的大规模生产。
Aiming at the development tendency of Ge-channel p-MOSFET induced by source and drain, a new technology of GeSn alloy growth based on ion implantation and rapid thermal annealing was developed. The effects of secondary ion mass spectrometry, X-ray diffraction, transmission electron microscopy Block resistance test. The results show that by means of rapid thermal annealing, the Sn atoms in the single crystal Ge substrate can be excited to the alternative position to form the GeSn alloy. When the annealing temperature is 400 ℃, the activation rate of Sn atoms is 100%, and the peak concentration is fixed at 1 × 1021 cm-3, which is not related to the initial implantation dose of Sn. The technology is compatible with existing CMOS processes at low added cost and is suitable for mass production of uniaxial strained Ge-channel MOSFETs.