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通过在硅 (10 0 )衬底上淀积的 Co(3nm ) /Ti(1nm )双金属层在不同退火温度下的固相反应 ,在硅衬底上制备了超薄外延 Co Si2 薄膜 .在低温下 ,用弹道电子显微术 (BEEM)及其谱线 (BEES)测量了 Co Si2 /Si接触的局域肖特基势垒高度 .对于 80 0℃退火的 Co Si2 /Si接触 ,势垒高度的空间分布基本符合高斯分布 ,其峰值在 5 99me V,标准偏差为 2 1me V.而对于 70 0℃退火样品 ,势垒高度分布很不均匀 ,局域的势垒高度值分布在 15 2 me V到 870 m e V之间 ,这可归因于 Co Si2 薄膜本身的不均匀性
An ultra-thin epitaxial Co Si2 thin film was deposited on a silicon substrate by a solid-state reaction of Co (3nm) / Ti (1nm) bimetal deposited on a silicon (100) substrate at different annealing temperatures. The local Schottky barrier height of Co Si2 / Si contacts was measured by ballistic electron microscopy (BEEM) and its spectral line (BEES) at low temperature.For Co Si2 / Si contact annealed at 80 ℃, the potential barrier The spatial distribution of height corresponds to Gaussian distribution with a peak at 599meV and a standard deviation of 2 1me V. For the annealed samples at 70 ℃, the barrier height distribution is not uniform, and the local barrier height values are distributed at 15 2 me V to 870 meV, which is attributed to the heterogeneity of the Co Si2 film itself