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采用室温射频磁控溅射非晶铟镓锌氧化合物(a-IGZO),在相对低的温度(<200℃)下成功制备底栅a-IGZO薄膜晶体管器件,其场效应迁移率10cm-2·V-1·s-1,开关比大于107,亚阈值摆幅SS为0.4V/dec,阈值电压为3.6V.栅电压正向和负向扫描未发现电滞现象.白光发光二极管光照对器件的输出特性基本没有影响,表明制备的器件可用于透明显示器件.研究了器件的光照稳定性,光照10000s后器件阈值电压负向偏移约0.8V,这种漂移是由于界面电荷束缚所致.
The gate-a-IGZO thin film transistor device was successfully fabricated at room temperature RF magnetron sputtering of a-IGZO with a field-effect mobility of 10cm-2 at relatively low temperature (<200 ℃) · V-1 · s-1, the switching ratio is greater than 107, the subthreshold swing SS is 0.4V / dec and the threshold voltage is 3.6V. No hysteresis is observed in the positive and negative scan of the gate voltage. The output characteristics of the device have almost no effect, indicating that the prepared device can be used for transparent display device.The light stability of the device is studied, and the threshold voltage of the device is negatively offset by about 0.8V after 10000s of light irradiation, which is caused by the binding of interface charges .