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研究了改变MESFET漏源电压大小和交换源漏电极对旁栅阈值电压的影响，并从理论上解释了与高场下衬底深能级EL2的碰撞电离关系。
The effect of changing the drain-source voltage of MESFET and the threshold voltage of the drain-source by exchanging the source and drain electrodes was studied, and the ionization-ionization relationship with the deep-level substrate EL2 was explained theoretically.