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硅与硅氧化物表面的反应侵蚀是制作微电子设备中的重要步骤,通常在碳氟化合物等离子体中完成。此时会产生大量的反应成份,从而给阐明侵蚀机构的细节造成极大的困难。同时,存在于等离子体内的带电成份经常导致抛光器件中所不希望的照射破坏。我们发现,用脉冲二氧化碳激光,采用红外多光子激励法分离原先的碳氟化合物,能产生用来侵蚀这些表面的反应中性成分。侵蚀气体如CF_3Br、 CF_2HCl、CDF_3、CF_3OOCF_3和SF_6等可以用来产
Reaction of Silicon with Silicon Oxide Erosion is an important step in the fabrication of microelectronic devices and is usually done in fluorocarbon plasma. At this time, a large amount of reaction components will be produced, which will cause great difficulty in elucidating the details of the erosion mechanism. At the same time, the charged components present in the plasma often result in unwanted radiation damage in the polishing device. We found that the pulsed carbon dioxide laser, which uses infrared multiphoton excitation to separate the original fluorocarbons, produces reactive neutrals that attack these surfaces. Erosion gases such as CF_3Br, CF_2HCl, CDF_3, CF_3OOCF_3 and SF_6 can be used to produce