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研究了硬质合金基体的预处理对金刚石沉积的影响，并确定了用 MPCVD法在 WC－ Co刀具 上沉积金刚石薄膜的工艺参数。采用了一些提高成核密度和沉积速率的方法， 用 SEM、 XRD和 Raman对金刚石薄膜的性质进行了分析。结果表明，合适的预处理可以有效的抑制钴的溢出并提 高薄膜的质量。
The effect of carbide substrate pretreatment on diamond deposition was studied, and the process parameters of diamond film deposition on WC-Co tool by MPCVD method were determined. Some methods to increase nucleation density and deposition rate were adopted. The properties of diamond films were analyzed by SEM, XRD and Raman. The results show that proper pretreatment can effectively inhibit the overflow of cobalt and improve the quality of the film.