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严重的自热效应和浮体效应是绝缘体上硅(SOI)器件的主要缺点。绝缘体上漏源(DSOI)结构的提出就是为了抑制SOI器件中的这两种效应。为了实现DSOI器件结构并且研究DSOI器件的特性,和SOI器件与体硅器件进行对比,采用新型的局域注氧工艺成功地在同一管芯上制作了DSOI、体硅和SOI3种结构的器件。通过对3种结构器件的电学特性和热学特性的测量比较,证明了DSOI器件成功地抑制了浮体效应,并且大大降低了自热效应。由于DSOI器件漏、源区下方埋氧层的存在,在消除了SOI器件严重的自热效应和浮体效应的同时,保持了SOI器件相对体硅器件的电学特性优势。DSOI器件成功地结合了SOI器件和体硅器件的优点,并且克服了两者的缺点,是一种很有希望的高速低功耗新器件。
Severe self-heating effects and buoyancy effects are the major drawbacks of silicon-on-insulator (SOI) devices. The SOI drain structure (DSOI) is proposed to suppress both effects in SOI devices. In order to realize the structure of DSOI device and study the characteristics of DSOI device, compared with SOI devices and bulk silicon devices, a new type of local oxygen injection process was successfully used to fabricate DSOI, bulk silicon and SOI devices on the same die. By comparing the electrical and thermal characteristics of the three kinds of devices, the DSOI device has been successfully suppressed the floating body effect and greatly reduced the self-heating effect. Due to the existence of the buried oxide layer below the source region of the DSOI device, the self-heating effect of the SOI device and the floating body effect are eliminated, and the electrical characteristics of the SOI device relative to the bulk silicon device are maintained. DSOI devices successfully combine the advantages of SOI devices and bulk silicon devices, and overcome the shortcomings of both. It is a promising high-speed low-power new device.