现在多晶硅材料的直接运用越来越多,因而对多晶硅材料的研究是十分有兴趣的课题之一.从高纯多晶硅原料的生产、多晶硅薄膜的CVD沉积,直到多晶硅太阳电池的发展,导致了人们对多晶硅晶体结构特性(晶粒度、织构)以及对晶界效应的研究.其目的就是要把晶界引入的不良影响降到最低限度,从而提高器件的性能.不论是气相沉积还是熔体正常凝固得到的多晶硅常常是有织构的.而多晶硅织构的形成带来了不同的晶粒度和晶界效应,由此对器件 Nowadays, there are more and more direct applications of polysilicon materials, so the research on polysilicon materials is one of the most interesting topics.From the production of high-purity polysilicon raw materials, CVD deposition of polycrystalline silicon thin films until the development of polycrystalline silicon solar cells, The research on the structural characteristics (grain size, texture) and grain boundary effect of polycrystalline silicon has the purpose of minimizing the adverse effects introduced by the grain boundaries and thus improving the performance of the device. Whether it is vapor deposition or melt The polysilicon obtained by normal solidification is often textured and the formation of polysilicon texture brings about different grain size and grain boundary effects,