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基于四阳极结反向串联型GaAs平面肖特基二极管,设计并实现了0.2THz宽带非平衡式二次倍频电路。肖特基二极管倒装焊接在75μm石英电路上。在小功率和大功率注入条件下,测试了倍频电路的输出功率和倍频效率。输入功率在10~15mW时,通过加载正向偏置电压,在210~224GHz,倍频效率大于3%,在212GHz处有最高点倍频效率为7.8%。输入功率在48~88mW时,在自偏压条件下,210~224GHz带内倍频效率大于3.6%,在214GHz处测得最大倍频效率为5.7%。固定输出频率为212GHz,在132mW功率注入时,自偏压输出功率最大为5.7mW,加载反向偏置电压为-0.8V时,输出功率为7.5mW。
Based on the quadrupole tandem reverse tandem GaAs planar Schottky diode, a 0.2THz wideband unbalanced quadratic frequency doubling circuit is designed and realized. Schottky diodes are flip-chip mounted on 75μm quartz circuitry. Under the conditions of low power and high power injection, the output power and frequency doubling efficiency of frequency multiplier circuit were tested. Input power at 10 ~ 15mW, by loading the forward bias voltage, at 210 ~ 224GHz, the frequency doubling efficiency is greater than 3%, the highest point at 212GHz frequency doubling efficiency of 7.8%. At 48 ~ 88mW input power, the band-doubling efficiency of 210 ~ 224GHz is more than 3.6% under the self-bias condition, and the maximum efficiency is 5.7% at 214GHz. The fixed output frequency is 212GHz. At 132mW power injection, the maximum self-bias output power is 5.7mW and the output power is 7.5mW when the reverse bias voltage is -0.8V.