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用12kW转靶X射线衍射装置测定了非晶半导体a-As_2Se_3,a-AsSe以及a-As_(0.05),Se_(0.95)的k吸收EXAFS,a-As_2Se_3经T≤T_g(玻璃转变温度)的不同温度处理后,亦进行了测定。由获得的径向结构函数分析表明:尽管a-As_2Se_3的短程结构与晶态c-As_2Se_3十分相似,但经过低于T_g的退火处理后,其径向结构函数发生了一定的变化。熔态淬火制备的a-As_2Se_3块体亦发生结构弛豫。此外,在非晶态As-Se二元系中随As含量的变化,材料的近程结构亦不同。
The absorption of a-As_2Se_3, a-AsSe, a-As_ (0.05) and Se_ (0.95) k-absorption EXAFS and a-As_2Se_3 of amorphous semiconductors with T≤T_g (glass transition temperature) After different temperature treatment, also carried out the determination. The radial structure function analysis shows that although the short-range structure of a-As_2Se_3 is very similar to that of crystalline c-As_2Se_3, the radial structure function of a-As_2Se_3 is changed after the annealing below T_g. The structure relaxation of a-As_2Se_3 block prepared by melt quenching also occurs. In addition, the short-range structure of the material varies with As content in amorphous As-Se binary system.