从现在开始,预见到2010年,C M O S工艺将迅速发展。随着工艺微细化的发展,C M O S管的集成度和性能将不断提高。目前,是C M O S技术发展的鼎盛时期。但只是不断地微细化,将很难提高晶体管的性能。因为不降低M O S管的开启电压,就无法提高其工作速度;同时,漏电流的增加,使管子本 From now on, it is foreseen that by 2010 the C M O S process will develop rapidly. With the development of the miniaturization of the process, the integration and performance of C M O S tubes will continue to increase. Currently, it is the heyday of C M O S technology development. But just constantly miniaturized, it will be difficult to improve the performance of the transistor. Because do not reduce the MOS transistor turn-on voltage, it can not increase its speed; the same time, the leakage current increases, so that the tube