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设计了一款用于无线通信射频系统的新型双平衡混频器芯片,该混频器的输出信号中不存在与射频输入信号相关的二次非理想项,具有高线性度.该混频器基于新型乘法器结构,在两个工作于线性区的对称金属氧化物半导体(MOS)晶体管的源、漏两极加入差分射频信号,在其栅极加入差分本振信号,从而以低复杂度方式实现射频信号与本振信号的双平衡混频或相乘;采用差分推挽放大器及源随器作为芯片的输出缓冲接口,改善了芯片与片外电路之间的隔离度,提高了功率增益和输出匹配性能.芯片采用0.18μm射频(RF)互补金属氧化物半导体(CMOS)工艺流片,实现超宽频带范围内的信号混频或相乘,1dB压缩点2.9dBm,三阶交调16 dBm,总功耗25 mW,芯片性能良好,可以满足高性能、超宽带、高速无线通信系统的要求.
A novel double-balanced mixer chip for radio communication RF system is designed. There is no quadratic non-ideal term associated with the RF input signal in the output signal of the mixer with high linearity. The mixer Based on the novel multiplier structure, a differential RF signal is added to the source and drain electrodes of two MOS transistors operating in a linear region, and a differential local oscillator signal is added at the gate thereof to achieve low complexity RF signal and the local oscillator signal of the double-balanced mixing or multiplying; using differential push-pull amplifier and source follower chip as the output buffer interface to improve the isolation between the chip and the chip circuit to improve the power gain and output Matching performance The chip adopts 0.18μm RF complementary metal oxide semiconductor (CMOS) process chip to achieve signal mixing or multiplication in the ultra-wideband range, with 1dB compression point of 2.9dBm, third-order intermodulation of 16dBm, Total power consumption 25 mW, the chip performance is good, to meet the high-performance, ultra-wideband, high-speed wireless communication system requirements.