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采用Pechini溶胶-凝胶法结合旋涂技术在单晶硅衬底上制备出了均匀、无裂纹的掺Tb3+的Lu2O3(Lu2O3:Tb)薄膜。用热重-差示扫描量热法分析了前驱体干凝胶在室温至1000℃下发生的热分解现象。利用X射线衍射和Fourier红外光谱和原子力显微镜研究了热处理温度对Lu2O3:Tb薄膜的晶相、化学组成和表面形貌的影响。结果表明:在550～1000℃间热处理的Lu2O3:Tb薄膜为多晶氧化镥立方结构,晶粒尺寸随温度升高而逐渐长大至30nm左右。在220nm紫外光激发下,Lu2O3:Tb薄膜呈现出较强的绿光发射,主发射峰分别位于542nm和551nm处。随着热处理温度的提高,Lu2O3:Tb薄膜中缺陷减少,发光强度增强。
A uniform and crack-free Tb3 + -doped Lu2O3 (Lu2O3: Tb) thin film was deposited on a monocrystalline silicon substrate by a Pechini sol-gel method combined with spin coating. Thermal decomposition of the precursor xerogel at room temperature to 1000 ℃ was analyzed by thermogravimetric-differential scanning calorimetry. The effects of heat treatment temperature on the crystalline phase, chemical composition and surface morphology of Lu2O3: Tb thin films were investigated by X-ray diffraction, Fourier transform infrared spectroscopy and atomic force microscopy. The results show that the films of Lu2O3: Tb heat treated at 550-1000 ℃ are polycrystalline cubic oxide 镥 cubic structure, and the grain size grows up to about 30 nm with the increase of temperature. Under the excitation of 220 nm UV light, the Lu2O3: Tb thin film shows a strong green emission with the main emission peaks at 542 nm and 551 nm, respectively. With the increase of the heat treatment temperature, the defects of Lu2O3: Tb film decrease and the luminescence intensity increases.