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CMOS图像传感器(CIS)在空间辐射或核辐射环境中应用时,均会受到总剂量辐照损伤的影响,严重时甚至导致器件功能失效。文章从微米、超深亚微米到纳米尺度的不同CIS生产工艺、从3TPD(Photodiode)到4TPPD(Pinned Photodiode)的不同CIS像元结构、从局部氧化物隔离技术(LOCOS)到浅槽隔离(STI)的不同CIS隔离氧化层等方面,综述了CIS总剂量辐照效应研究进展。从CIS器件工艺结构、工作模式和读出电路加固设计等方面简要介绍了CIS抗辐射加固技术研究进展。分析总结了目前CIS总剂量辐照效应及加固技术研究中亟待解决的关键技术问题,为今后深入开展相关研究提供理论指导。
CMOS image sensor (CIS) in space radiation or nuclear radiation environment, will be affected by the total dose of radiation damage, and even lead to device failure even in severe cases. Different CIS processes from micrometer to ultra-deep submicron to nanoscale are used for the different CIS pixel structures from 3 TPD (Photodiode) to 4 TPPD (Pinned Photodiode), from local oxide isolation technology (LOCOS) to shallow trench isolation (STI ) In different CIS isolation oxide layer, reviewed the research progress of the total dose of CIS radiation effects. The research progress of CIS anti-radiation reinforcement technology is briefly introduced from the CIS device structure, working mode and readout circuit reinforcement design. The key technical problems to be solved urgently in the study of total dose radiation effect and reinforcement technology of CIS are analyzed and summarized, which will provide theoretical guidance for further research in the future.