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用等离子体增强化学气相淀积制备了Ge掺杂SiO2薄膜,并对薄膜进行了不同温度的退火处理。采用棱镜耦合仪、原子力显微镜和傅里叶变换红外光谱分析技术研究了不同退火温度对Ge掺杂SiO2薄膜性质的影响。通过1 100℃退火处理后,正的折射率变化量和负的体积变化量随着GeH4流量增加而增大,Ge-O-Ge键增多;而通过900℃退火处理后,折射率没有随着GeH4流量增加而增大;薄膜的表面粗糙度随着退火温度升高而降低。研究结果表明,SiO2薄膜中Ge掺杂过量,其折射率反常下降;通过1 100℃退火处理后,折射率随着GeH4流量增加而增大,折射率的增大主要是由于薄膜密实化和Ge-O-Ge键的形成。
Ge-doped SiO2 films were prepared by plasma-enhanced chemical vapor deposition, and the films were annealed at different temperatures. The influence of annealing temperature on the properties of Ge-doped SiO2 thin films was investigated by prism coupler, atomic force microscopy and Fourier transform infrared spectroscopy. After annealing at 100 ℃, the positive refractive index change and the negative volume change increase with the increase of GeH4 flow rate and the Ge-O-Ge bond increases. However, the refractive index does not change with annealing at 900 ℃ The flow rate of GeH4 increased and the surface roughness of the film decreased with the increase of annealing temperature. The results show that the refractive index of silica films decreases abnormally when the content of Ge is too high. The refractive index increases with the increase of GeH4 flow rate after annealing at 1 100 ℃. The increase of refractive index is mainly due to the densification of thin films and the increase of Ge -O-Ge bond formation.