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研究了栅电流及结构参数对SiC双极模式场效应晶体管(BMFET)功率特性的影响。仿真研究的结果表明,SiC BMFET器件的开态电阻和电流增益都会随着栅电流的上升而显著下降。沟道掺杂浓度越低,沟道宽度越窄,双极模式调制器件开态电阻的效果越明显,但同时电流增益会降低。相比于单极模式SiC结型场效应晶体管(JFET),SiC BMFET可以显著提升器件的FOM优值,降低器件功率特性对结构参数的敏感度,同时降低了常关型器件的设计难度。
The effects of gate current and structure parameters on the power characteristics of SiC bipolar mode field effect transistors (BMFETs) were investigated. The simulation results show that the on-state resistance and current gain of SiC BMFETs decrease significantly with the increase of gate current. The lower the channel doping concentration and the narrower the channel width, the more obvious is the effect of the on-state resistance of the bipolar mode modulation device, but at the same time, the current gain will decrease. Compared with the unipolar mode SiC junction field effect transistor (JFET), the SiC BMFET can significantly improve the FOM merit of the device, reduce the sensitivity of device power characteristics to the structural parameters, and reduce the design difficulty of the normally-off device.