发现了一种在单晶蓝宝石上利用高温分解 SiH_4来淀积硅薄膜的方法。薄膜的电子衍射和劳埃反射检验都示出了单晶花样。硅薄膜的霍尔迁移率在空穴密度10~(17)/厘米~3时为135厘米~2/伏特·秒。制成了电流5毫安时具有1000微姆欧跨导值的绝缘栅场效应晶体管,其尺寸为:源到漏的间距为10微米,作用区宽度为120微米。这跨导值可与在块状硅上制成的同样元件相比较,因此这种晶体管是极有希望的薄膜硅器件。 A method of depositing a thin film of silicon using pyrolytic SiH_4 on single crystal sapphire has been found. Electron diffraction and Laue reflection tests of the films all show single crystal patterns. The Hall mobility of the silicon thin film is 135 cm 2 / V · sec at a hole density of 10-17 / cm -3. Insulated gate field effect transistors with 1000 micromhos transconductance at a current of 5 mA were fabricated with dimensions of 10 micrometers for source to drain and 120 micrometers for the active area. This transconductance can be compared to the same elements made on bulk silicon, so this transistor is a promising thin film silicon device.