在0.13μm铜连线技术节点上,双镶嵌等离子体刻蚀的优化是最具有挑战性的问题之一。通过理论模型分析和实验对双镶嵌结构的刻蚀技术进行了研究。解释了等离子体电荷累积过程。提出了一个简化的模型并进行了定性的计算。模型和实验的结果表明:通过对等离子体刻蚀参数的优化可以产生一个能减少底部防反光层的围墙式缺陷的刻蚀剖面。 Optimization of dual damascene plasma etching is one of the most challenging issues at 0.13μm copper interconnect technology nodes. The etching technology of dual damascene structure has been studied by theoretical model analysis and experiment. Explained the plasma charge accumulation process. A simplified model is proposed and qualitatively calculated. The results of the model and the experiments show that an optimized etching profile of the plasma can produce an etched profile that can reduce the wall defects of the bottom anti-reflective layer.