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采用刻蚀型介质制作前栅场发射器件。该器件中阴栅结构的形成是利用刻蚀工艺刻蚀介质层,一次性实现栅孔和阴极电极的连通,最后利用电泳沉积工艺转移碳纳米管制备成阴极发射点阵。该工艺避免了对准或套印,使前栅场发射器件制作工艺更简单,降低了成本,更容易实现大面积制作。场发射测试表明当阳压在1500和2000 V时,栅压都能够有效地控制阴极的电子发射。
Pre-gate field emission devices are fabricated using an etched dielectric. The formation of the pvc structure in the device utilizes the etching process to etch the dielectric layer to achieve the connection between the gate hole and the cathode electrode at one time. Finally, the electrophoretic deposition process is used to transfer the carbon nanotubes to prepare the cathode emitting lattice. The process avoids alignment or overprinting, so that the front gate field emission device manufacturing process is more simple, lower costs, easier to achieve large-scale production. The field emission tests show that the gate voltage can effectively control the cathode electron emission when the anode pressure is between 1500 and 2000 V.