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以化学气相沉积(CVD)制备的单层石墨烯为原料,小分子三嗪为掺杂剂,采用吸附掺杂的方式,在低温下对石墨烯实现n型掺杂.利用拉曼光谱(Raman)、X射线光电子能谱分析(XPS)、原子力显微镜(AFM)、紫外分光光度计(UV)和霍尔效应测试仪(Hall)对样品的形貌、结构及电学性能进行表征.结果表明:该方法简单安全,能够对石墨烯实现均匀的n型掺杂,掺杂石墨烯的透光率达到95％.掺杂后石墨烯的特征峰G峰和2D峰向高波数移动.掺杂180 min后,载流子浓度达到4×1012/cm2,接近掺杂前的载流子浓度,掺杂后的石墨烯在450℃的退火温度下具有可逆能力,其表面电阻在300℃以下具有较好的稳定性.,Nitrogen-doped graphene (N-graphene) was prepared via molecular doping from symTriazine molecules at low temperature.The phase structure,morphology and electrical property were characterized by Raman spectroscopy (Raman),X-ray photoelectron spectroscope(XPS),atomic force microscope (AFM),ultraviolet spectrophotometer(UV),and Hall tester.Here the method provides a simple and safe process to grow N-graphene.The morphology of N-graphene retains good uniformity,and the transmittance of the graphene is 95％ in the range from 300 nm to 800 nm.The typical graphene peaks G-band and 2D-band both upshift after doping.The hole-carrier concentration is decreased immediately after Triazine decoration.After exposure to Triazine for 3 h,the charge-cartier concentration of N-graphene remains as high as 4×1012/cm2,which approaching the pristine Chemical Vapor Deposition (CVD) graphene’s carrier concentration due to the abundant molecular doping.After N-graphene annealed at 450 ℃,a hole-carrier concentration of ～8× 1012/cm2 can be regenerated.The sheet resistance of N-graphene can stay steady at 300 ℃.The mechanism of Triazine doping is that Triazine is an electron-rich aromatic molecule due to the incorporation of N atoms in the aromatic ring,and some negative charges are expected to transfer onto the graphene.This research provides a simple method to obtain N-graphene doping for future application in electrical devices.