论文部分内容阅读
本文简单介绍了GaInAsSb/GaSb PIN探测器的结构及工作原理,重点分析了生长窗口层和硫钝化两种不同的改善探测器Ⅰ-Ⅴ反向偏软的特性的方法。
In this paper, we briefly introduce the structure and working principle of GaInAsSb / GaSb PIN detector. We focus on the analysis of the growth window layer and the two different passivation methods to improve the detector Ⅰ-Ⅴ reverse skewness.