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辉光放电等离子体沉积a-Si∶H膜已被用作光导型摄象管的光电导靶,并对其工作特性作了研究。结果表明:和一般的Sb_2S_3管比较,该管具有优良的特性。由于是“单室”靶结构,这种光电导管的制作程序相当简单。在大气中200℃以下a-Si∶H膜是稳定的,因而材料本身就决定了它适于作低成本、高性能器件。该管特别适用于x射线成象。为增加效率,非晶硅层可制备在硅窗口上,或用标准方式和输入侧荧光屏耦合。此材料也可用来制作EBIC(电子轰击感应电导)型管子,此时用a-Si∶H替换二极管阵列。使硅网络中结合C和Ge来控制其掺杂特性,可变更带隙,从而分别扩展了蓝光和红光响应。同样,此材料可掺P或B来获得p-i-n结构靶,制成功和氧化铅管相似的的摄象管。
Glow discharge plasma deposition a-Si: H film has been used as a photoconductive photoconductor target tube, and its operating characteristics were studied. The results show that compared with the ordinary Sb_2S_3 tube, the tube has excellent properties. Due to the “single chamber” target structure, this photoconductor fabrication process is fairly straightforward. The a-Si: H film is stable below 200 ° C in the atmosphere, so the material itself has determined that it is suitable for low cost, high performance devices. The tube is particularly suitable for x-ray imaging. To increase efficiency, the amorphous silicon layer can be fabricated on a silicon window or coupled to the input side phosphor screen in a standard manner. This material can also be used to make EBIC (electron impact inductively conductive) tubes where the diode array is replaced by a-Si: H. By combining C and Ge in the silicon network to control their doping characteristics, the band gap can be changed, thereby expanding the blue and red response, respectively. Similarly, this material can be doped with P or B to obtain the p-i-n target structure, made of lead oxide tubes similar to the tube.