论文部分内容阅读
利用射频磁控溅射方法,在n型(100)Si基底上沉积了不同厚度(54～124nm)的纳米氮化硼(BN)薄膜.红外光谱分析表明,BN薄膜结构为六角BN(h-BN)相(1380cm-1和780cm-1)结构.在超高真空系统中测量了不同膜厚的场发射特性,发现阈值电压随着厚度的增加而增大.厚度为54nm的BN薄膜样品阈值电场为10V/μm,当外加电场为23V/μm时,最高发射电流为240μA/cm2.BN薄膜场发射F-N曲线表明,在外加电场作用下,电子隧穿了BN薄膜表面势垒发射到真空.
Nano-BN thin films with different thickness (54 ~ 124nm) were deposited on n-type (100) Si substrate by RF magnetron sputtering.The results of FTIR showed that the structure of BN thin film was hexagonal BN (h- (1380cm-1 and 780cm-1). The field emission characteristics at different film thicknesses were measured in an ultra-high vacuum system and the threshold voltage was found to increase with increasing thickness. The BN thin film sample with a thickness of 54nm The electric field is 10V / μm, and the maximum emission current is 240μA / cm2 when the applied electric field is 23V / μm2.FN curve of the BN thin film shows that under the applied electric field, electrons tunnel through the surface barrier of the BN thin film and emit into the vacuum.