本文用DLTS法测量了直拉硅和区熔硅中与铜有关的深能级及其俘获截面,测量了其中部分能级的空间分布,研究了区熔硅中与铜有关深能级的退火特性。结果表明在硅中与铜有关的深能级中不存在文献报道过的代位铜的三个受主态或一个施工和三个受主态,其中的多数能级是铜和晶格缺陷的络合物。 In this paper, the DLTS method was used to measure the copper-related deep level and its capture cross-section in Czochralski silicon and zone melting silicon. The spatial distribution of some energy levels was measured. The annealing of copper-related deep levels characteristic. The results show that there are no acceptor states, or one acceptor state and one acceptor state in the copper-related deep level reported in the literature, most of which are the network of copper and lattice defects Compound.